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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 80 A
Pd - Power Dissipation : 345 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : 30 V
Configuration : Single
Collector-Emitter Saturation Voltage : 2 V
Manufacturer : Microsemi
Description : IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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